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| Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 General Description The AP2128 Series are positive voltage regulator ICs fabricated by CMOS process. The AP2128 provides two kinds of output voltage operation modes for setting the output voltage. Fixed output voltage mode senses the output voltage on VOUT, adjustable output voltage mode needs two resistors as a voltage divider The AP2128 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. AP2128 has 1.0V, 1.2V, 3.3V fixed voltage version and 0.8V to 4.5V adjustable voltage version. AP2128 series are available in SOT-23-5 Package. Features * * * * * * * * * * * * * Wide Operating Voltage: 2.5V to 6V Low Dropout Voltage (3.3V only): 170mV@300mA High Output Voltage Accuracy: 2% High Ripple Rejection: 65dB@ f=1kHz, 45dB@ f=10kHz Low Standby Current: 0.1A Low Quiescent Current: 60A Typical Low Output Noise: 60Vrms Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1F for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50s Auto Discharge Resistance: RDS(ON)=60 Applications * * * Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2128 Jun. 2008 Rev. 1.1 1 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Pin Configuration K Package (SOT-23-5) Shutdown GND VIN 1 2 3 5 ADJ/NC 4 VOUT Figure 2. Pin Configuration of AP2128 (Top View) Functional Block Diagram SHUTDOWN UVLO & Shutdown Logic VIN Thermal Shutdown Foldback Current Limit VOUT 3M NC VREF GND Fixed Version Jun. 2008 Rev. 1.1 2 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Functional Block Diagram (Continued) SHUTDOWN UVLO & Shutdown Logic VIN Thermal Shutdown Foldback Current Limit VOUT 3M ADJ VREF GND Adjustable Version Figure 3. Functional Block Diagram of AP2128 Jun. 2008 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Ordering Information AP2128 Circuit Type G1: Green TR: Tape and Reel Package K: SOT-23-5 ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 3.3: Fixed Output 3.3V Product Package Temperature Range Part Number Green AP2128K- ADJTRG1 FAD FAJ FAK FAL Marking ID Green Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel AP2128 SOT-23-5 -40 to 85oC AP2128K-1.0TRG1 AP2128K-1.2TRG1 AP2128K-3.3TRG1 BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Jun. 2008 Rev. 1.1 4 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Absolute Maximum Ratings (Note 1) Parameter Input Voltage Shutdown Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance ESD (Human Body Model) ESD (Machine Model) Symbol VIN VCE IOUT TJ TSTG TLEAD RJA ESD ESD Value 6.5 -0.3 to VIN+0.3 450 150 -65 to 150 260 250 6000 300 Unit V V mA oC oC o C oC/W V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TJ Min 2.5 -40 Max 6 85 Unit V oC Jun. 2008 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (AP2128-ADJ, VIN min=2.5V, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Reference Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Quiescent Current Standby Current Symbol VREF VIN IOUT(MAX) VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) IQ ISTD VIN-VOUT=1V, 1mAIOUT300mA VOUT+0.5VVIN6V IOUT=30mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode f=100Hz Power Supply Rejection Ratio Output Voltage Temperature Coefficient Output Current Limit Short Current Limit Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis PSRR Ripple 1Vp-p VIN=VOUT+1V f=1KHz f=10KHz (VOUT/VOUT) /T ILIMIT ISHORT tUP VNOISE TA=25 C, 10Hz f100kHz Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 o Conditions VIN=2.5V 1mAIOUT300mA Min 0.748 2.5 Typ 0.8 Max 0.816 6 Unit V V mA 450 0.6 0.06 60 0.1 65 65 45 90 1.0 %/A %/V A A dB dB dB ppm/oC mA mA IOUT=30mA, -40oCTJ85oC 100 400 VOUT=0V 50 50 60 6 0.4 s Vrms V V M o o C C Jun. 2008 Rev. 1.1 6 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (Continued) (AP2128-1.0V/1.2V,VIN min. =2.5V, AP2128-3.3V, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT(MAX) VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) VDROP IQ ISTD VIN-VOUT=1V, 1mAIOUT300mA VOUT+0.5VVIN6V IOUT=30mA VOUT=1.0V, IOUT=300mA Dropout Voltage Quiescent Current Standby Current VOUT=1.2V, IOUT=300mA VOUT=3.3V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode f=100Hz Power Supply Rejection Ratio Output Voltage Temperature Coefficient Output Current Limit Short Current Limit Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis PSRR Ripple 1Vp-p VIN=VOUT+1V f=1KHz f=10KHz (VOUT/VOUT) /T ILIMIT ISHORT tUP VNOISE TA=25oC, 10Hz f100kHz 1.5 0 60 3 165 30 IOUT=30mA, -40oCTJ85oC VIN-VOUT=1V, VOUT=0.98*VOUT VOUT=0V 1400 1200 170 60 0.1 65 65 45 Conditions VIN=VOUT+1V 1mAIOUT300mA Min 98%* VOUT 2.5 450 0.6 0.06 1500 1300 300 90 1.0 mV Typ Max 102%* VOUT 6 Unit V V mA %/A %/V A A dB dB dB ppm/oC mA mA 100 400 50 50 60 6 0.4 s Vrms V V Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" M oC oC Jun. 2008 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics 3.5 1.0 0.9 0.8 240 220 T C=-40 C T C=25 C T C=125 C o o 3.0 2.5 2.0 1.5 200 180 o Dropout Voltage (mV) Output Voltge (V)(V) Output Voltage 0.7 0.6 0.5 0.4 160 140 120 100 80 60 40 20 0 50 100 150 200 250 300 0.3 1.0 0.2 0.1 Tc=-40 C TC=-40 C Tc=25 C TC=25 C o o T =125 C Tc=85 C C VIN=4.4V o o o o 0.5 Vin=2.5V, Vout=0.8V 0 0 50 100 100 150 200 200 250 300 300 350 400 400 0.0 0.0 450 500 500 Output Current (mA) Input Voltage (V) Output Current (mA) Figure 4. Output Voltage vs. Output Current Figure 5. Dropout Voltage vs. Output Current, VOUT=3.3V 120 115 110 105 70 TC=-40 C TC=25 C Quiescent Current (A) o o o 68 66 64 62 60 58 56 54 52 50 -40 IOUT=0 VIN=2.5V, VOUT=0.8V Quiescent Current (A) 100 95 90 85 80 75 70 65 60 55 50 0 TC=85 C VIN=2.5V, VOUT=0.8V 50 100 150 200 250 300 -20 0 20 40 60 o 80 100 120 Output Current (mA) Case Temperature ( C) Figure 6. Quiescent Current vs. Output Current Figure 7. Quiescent Current vs. Case Temperature Jun. 2008 Rev. 1.1 8 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 80 0.807 70 60 50 40 30 20 10 0 1.0 V =2.5V, CIN=COUT=1uF IN 0.806 IOUT=10mA, Vout=0.8V Quiescent Current (A) Output Voltage (V) TC=25 C VOUT=0.8V, IOUT=0 o 0.805 0.804 0.803 0.802 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.801 -40 -20 0 20 40 60 o 80 100 120 Input Voltage (V) Case Temperature ( C) Figure 8. Quiescent Current vs. Input Voltage Figure 9. Output Voltage vs. Case Temperature 1.0 34 VIN=2.5V, VOUT=0.8V, CIN=COUT=1F 0.9 0.8 32 0.7 Short Current (mA) Output Voltge (V) 0.6 0.5 0.4 0.3 0.2 30 28 TC=-40 C TC=25 C TC=85 C VOUT=0.8V 0 1 2 3 4 5 6 7 8 o o o 26 0.1 -40 -20 0 20 40 60 o 80 100 120 0.0 Case Temperature ( C) Input Voltage (V) Figure 10. Short Current vs. Case Temperature Figure 11. Output Voltage vs. Input Voltage (IOUT=0mA) Jun. 2008 Rev. 1. 1 9 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 1.0 0.9 0.8 2.0 1.8 1.6 VOUT=0.8V No heatsink Power Dissipation (W) Output Voltge (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 TC=-40 C TC=25 C TC=85 C VOUT=0.8V 5 6 o o o -20 0 20 40 60 o 80 100 120 Input Voltage (V) Case Temperature( C) Figure 12. Output Voltage vs. Input Voltage (IOUT=300mA) Figure 13. Power Dissipation vs. Case Temperature IOUT IOUT VOUT VOUT Figure 14. Load Transient (Conditions: CIN=COUT=1F, VIN=2.5V, VOUT=0.8V) Figure 15. Load Transient (Conditions: CIN=COUT=1F, VIN=4.4V, VOUT=3.3V) Jun. 2008 Rev. 1.1 10 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) VIN VIN VOUT VOUT Figure 16. Line Transient (Conditions: IOUT=30mA, CIN=COUT=1F, VIN=2.5 to 3.5V, VOUT=0.8V) Figure 17. Line Transient (Conditions: IOUT=30mA, CIN=COUT=1F, VIN=4 to 5V, VOUT=3.3V) VOUT VOUT VShutdown VShutdown Figure 18. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1F, VShutdown=0 to 2V, VOUT=3.3V) Figure 19. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1F, VShutdown=0 to 2V, VOUT=0.8V) Jun. 2008 Rev. 1. 1 11 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 100 90 80 70 100 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1F, VOUT=0.8V 90 80 70 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1F, VOUT=3.3V PSRR (dB) PSRR (dB) 60 50 40 30 20 10 0 100 1000 10000 100000 60 50 40 30 20 10 0 100 1000 10000 100000 Frequency (Hz) Frequency (Hz) Figure 20. PSSR vs. Frequency Figure 21. PSRR vs. Frequency Jun. 2008 Rev. 1.1 12 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Application VIN VIN VOUT VOUT AP2128 Shutdown CIN 1F GND ADJ R1 COUT 1F R2 VOUT=0.8*(1+R1/R2) V VIN VIN VOUT VOUT AP2128 Shutdown CIN 1F COUT 1F GND VOUT=1.0, 1.2, 3.3V Figure 22. Typical Application of AP2128 Jun. 2008 Rev. 1. 1 13 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0 8 1.050(0.041) 1.250(0.049) 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Jun. 2008 Rev. 1.1 14 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. 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